Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
1998-11-17
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257300, 365149, 365174, H01L 27108
Patent
active
058380388
ABSTRACT:
A semiconductor memory device includes active regions arranged on a semiconductor substrate such that those of the active regions which are adjacent in the word line direction deviate in the bit line direction, MOS transistors respectively formed in the active regions and each having a source and a drain one of which is connected to the bit line, a plurality of trenches each arranged to another set of source an drain regions and arranged to deviate in the word line direction in the respective active regions, those of the trenches which are adjacent with a through word line disposed therebetween being arranged to deviate in the bit line direction so as to be set closer to each other, a plurality of storage electrodes respectively formed in the trenches with capacitor insulative films disposed therebetween, and connection electrodes arranged between the word lines and each connecting the other of the source and drain to the storage electrode.
REFERENCES:
patent: 4864375 (1989-09-01), Teng et al.
patent: 5025294 (1991-06-01), Ema
patent: 5386131 (1995-01-01), Sato
patent: 5396450 (1995-03-01), Takashima et al.
1993 Symposium on VLSI Circuits, Digest of Technical Papers, pp. 89-90, May 19-21, 1993, Daisaburo Takashima, et al., "Open/Folded Bit-line Arrangement for Ultra High-Density DRAMS".
Hamamoto Takeshi
Oowaki Yukihito
Ozaki Tohru
Takashima Daisaburo
Watanabe Shigeyoshi
Chaudhuri Olik
Kabushiki Kaisha Toshiba
Wille Douglas A.
LandOfFree
Dynamic random access memory device with the combined open/folde does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic random access memory device with the combined open/folde, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory device with the combined open/folde will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-886960