Wafer surface modification for improved electrostatic chucking e

Details Wafer surface modification for improved electrostatic chucking e Wafer surface modification for improved electrostatic chucking e

1996-08-09

1998-11-17

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

438761, 438763, 438928, H01L 2120

Patent

active

058375996

ABSTRACT:
A method of improving electrostatic chucking efficiency between a silicon wafer which has an oxide layer formed on a back side and a susceptor positioned in a wafer processing chamber wherein the back side is opposite to the side of the wafer to be processed for integrated circuit devices including the steps of first forming an electrically conducting layer on top of the oxide layer by transforming to a more hydrophilic oxide structure and then positioning the wafer on the susceptor with the electrically conducting layer contacting the susceptor.

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