Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-01-29
1998-11-17
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438 59, 438202, 148DIG10, 148DIG124, 257462, 257444, 257448, H01L 218242
Patent
active
058375740
ABSTRACT:
A capacitor coupled contactless imager structure and method of manufacturing the structure results in a phototransistor that includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the collector region. An n-doped polysilicon emitter contact is formed in contact with the surface of the P-type base region such that an n+ epitaxial region is formed in the base region as the emitter of the imager phototransistor. Silicon dioxide separates the polysilicon emitter contact and exposed surfaces of the base region from a layer of poly2 about 500-600 .ANG. thick that is formed to cover the entire base region.
REFERENCES:
patent: 5241169 (1993-08-01), Ohzu
patent: 5289023 (1994-02-01), Mead
patent: 5429980 (1995-07-01), Yang et al.
patent: 5501998 (1996-03-01), Chen
patent: 5552619 (1996-09-01), Bergemont et al.
patent: 5576237 (1996-11-01), Bergemont et al.
Eric R. Fossum, "Active-pixel sensors challenge CCDs", Laser Focus World, Technology Guide: Detector Handbook, Jun. 1993, pp. 83-87.
Bergemont Albert
Chi Min-hwa
Haggag Hosam
Mead Carver A.
National Semiconductor Corporation
Niebling John F.
Pham Long
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