Semiconductor device having spacer and method of making same

Details Semiconductor device having spacer and method of making same Semiconductor device having spacer and method of making same

1998-07-10

1999-07-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, 257900, H01L 27088

Patent

active

059294833

ABSTRACT:
A semiconductor device having a double spacer and a method of manufacturing the device are provided. The semiconductor device includes a first spacer formed on the sidewall of a gate electrode and a second spacer formed on the slanted sidewall of the first spacer. A first impurity region is formed doped with a first conductivity type impurity at a first concentration and formed at a small junction depth in the substrate to self-align at the edge of the gate electrode. A second impurity region doped with a second conductivity type impurity at a second concentration is formed at a large junction depth in the substrate to self-align at the edge of the first spacer. A third impurity region doped with the first conductivity type impurity at a third concentration is formed at a medium junction depth in the second impurity region to self-align at the edge of the second spacer.

REFERENCES:
patent: 5089865 (1992-02-01), Mitsui et al.
patent: 5091763 (1992-02-01), Sanchez
patent: 5278441 (1994-01-01), Kang et al.
patent: 5444282 (1995-08-01), Yamaguchi et al.
patent: 5710450 (1998-01-01), Chau et al.
patent: 5719425 (1998-02-01), Akram et al.

Affiliated with

Also associated with

Rating

Semiconductor device having spacer and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having spacer and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having spacer and method of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-881739