Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-23
1999-07-27
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438289, 438451, 438529, H01L 218238
Patent
active
059279915
ABSTRACT:
An improved method for forming a triple well of a semiconductor device which is capable of more simply and easily forming a triple well without removing an anti-oxidation film. In addition, it is possible to reduce the amount of the removal of the field oxidation film and to improve the characteristics of the latch-up and the device isolation, which includes the steps of preparing a first conductive type semiconductor substrate having an active region and a field region, forming a buffer film on the active region of the substrate and an anti-oxidation film on the buffer film, forming a field oxidation film on the field region, forming a second conductive type first dopant region on the substrate by implantating a first ion through the field oxidation film and the anti-oxidation film, forming a first conductive type first dopant region by implantating a second ion in a first well region of the substrate, forming a first conductive type second dopant region by implantating a third ion in a second well region of the substrate, which the second well region is spaced apart from the first well region, and forming a second conductive type second dopant region by implantating a fourth ion in a third well region of the substrate between the first well region and the second well region.
REFERENCES:
patent: 5501993 (1996-03-01), Borland
patent: 5608253 (1997-03-01), Liu et al.
patent: 5693505 (1997-12-01), Kobayashi
patent: 5753956 (1998-05-01), Honeycutt et al.
patent: 5814866 (1998-09-01), Borland
patent: 5821589 (1998-10-01), Borland
Borland, John O., "Applications of M V Ion Implantation in Semiconductor Device Manufacturing," Semicon/Korea '95, Technical Symposium, Jan. 19-20, 1995, pp. 107-115.
Lattin Christopher
LG Semicon Co. Ltd.
Niebling John F.
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