Refractory metal deposition process

Details Refractory metal deposition process Refractory metal deposition process

1987-10-22

1988-12-27

Pianalto, Bernard

Coating processes

Electrical product produced

Metal coating

427 79, 4271261, 4271263, 427253, 4272551, 427265, 427294, 427404, 4274192, 4274197, B05D 512

Patent

active

047940190

ABSTRACT:
Process for depositing tungsten or other refractory metals on semiconductor devices by a reaction of a gas containing the metal in a vapor deposition reactor. The reaction occurs at relatively low temperature (240.degree.-400.degree. C.) and pressure (0.1-10 torr), and the resulting film adheres differently to different substrate materials. Patterned coatings can be made without the patterning steps which are required with prior art techniques.

REFERENCES:
patent: 3373018 (1968-03-01), Oxley et al.
patent: 3519479 (1970-07-01), Inoue et al.
patent: 4517225 (1985-05-01), Broadbent
Powell et al "Vapor Deposition", John Wiley & Sons, pp. 308-309 1966.
Wahl et al, "The CVD of Fluoride Tungsten Measurements and Thermodynamic Calculations", CVD 4th Int. Conf., Electrochemical Society, Inc. Princeton, N.J. 1973 pp. 425-438.
Powell et al, Vapor Deposition, Electrochemical Society, NY, N.Y, Wiley & Sons Inc. 1966 p. 687.

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