Differential copper deposition on integrated circuit surfaces

Details Differential copper deposition on integrated circuit surfaces Differential copper deposition on integrated circuit surfaces

1998-08-17

1999-12-14

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, H01L 2348, H01L 2352, H01L 2940

Patent

active

060021764

ABSTRACT:
A method for selectively applying CVD copper to metallic surfaces, that are co-located with non-metallic surfaces, is provided. The method prepares both the metal and non-metallic surfaces with a low energy ion etch of an inert gas. The etching promotes the growth of copper on the metallic surface, and inhibits the growth on the non-metallic surface. Following an application of CVD copper, the surfaces are etched again to clean any residual copper from the non-metallic surface, and to again prepare the surfaces for another deposition of copper. Through repeated cycles of etching and copper deposition, the copper overlying the metallic surface is accumulated to achieve the desired thickness, while the non-metallic surface remains free of copper. A method is also provided for the selective deposition of copper on metallic surfaces to fill interconnects in damascene IC structures. An IC with a copper layer overlying a metallic surface, co-located with a non-metallic surface, where the copper layer is grown through repeated cycles of ion etching and copper deposition, is also provided.

REFERENCES:
patent: 4996584 (1991-02-01), Young et al.
patent: 5656858 (1997-08-01), Kondo et al.

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