Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-09
1999-12-14
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438197, 438199, 438238, 438652, 438657, 438634, 438684, 438671, 438672, H01L 218242
Patent
active
06001685&
ABSTRACT:
A method of making a semiconductor device having a structure capable of obtaining an increased alignment margin for a mask without any increase in the area of the semiconductor device is shown by forming a contact plug on a drain while forming a contact pad on a source, without forming contact plugs on both the source and the drain in a simultaneous manner. The contact pad has an upper portion partially overlapping with a portion of an insulating film surrounding a contact hole in which the contact pad is buried. Accordingly, it is possible to easily carry out the contact process.
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Gurley Lynne A.
Hyundai Electronics Industries Co,. Ltd.
Niebling John F.
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