Method of making ultra-short channel MOSFET with self-aligned si

Details Method of making ultra-short channel MOSFET with self-aligned si Method of making ultra-short channel MOSFET with self-aligned si

1997-12-19

1999-01-05

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438592, 438520, 438769, H01L 21336, H01L 213205, H01L 214763

Patent

active

058562265

ABSTRACT:
An ultra-short channel MOSFET with the self-aligned silicided contact and the extended ultra-shallow source/drain junction is formed. An extremely short gate region can be defined without being limited with the bottleneck of the existed lithography technology. A good quality gate insulator layer forming from the regrowth of an oxynitride film is provided. A self aligned metal silicide process is performed to form the contacts. A disposable spacer structure is used to remove metal residue and thus the possible path for leakage is eliminated. An ultra shallow region is formed employing the metal silicide as a diffusion source. An extented source/drain region is provided.

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