Resist material including si-containing resist having acid remov

Details Resist material including si-containing resist having acid remov Resist material including si-containing resist having acid remov

1996-03-18

1999-01-05

Codd, Bernard P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

4302701, 4302731, 430323, 430328, 430330, 430910, G03C 516, G03C 173

Patent

active

058560718

ABSTRACT:
A fine pattern is formed using a resist material including a copolymer of a silicon-containing acrylate and an acrylate which contains a group that is eliminated by an acid, and a photo-acid generator which generates the acid upon irradiation. The polarity of the material changes after elimination of this group and becomes soluble in an aqueous alkali solution.

REFERENCES:
patent: 5045431 (1991-09-01), Allen et al.
patent: 5068169 (1991-11-01), Takechi et al.
patent: 5100762 (1992-03-01), Tanaka et al.
patent: 5153103 (1992-10-01), Kotachi et al.
patent: 5326670 (1994-07-01), Kotachi et al.
patent: 5346803 (1994-09-01), Crivello et al.
Lamola et al., "Chemically Amplified Resists", Solid State Technology, Aug. 1991, pp. 53-60.
Reichmanis et al., "Chemical Amplification Mechanisms for Microlithography," Materials, 1991, vol. 3, No. 3 pp. 394-407.

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