Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1998-02-25

1999-08-03

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438279, 438284, 438289, 438291, H01L 21336

Patent

active

059337362

ABSTRACT:
A semiconductor device having the high integration and great driving ability is provided. An upper gate oxide film is formed on a gate electrode. An upper drain region is formed on a lower drain region through an oxide film, and an upper source region is formed on a lower source region through the oxide film. A polysilicon region is formed on the upper gate oxide film provided between the upper drain region and the upper source region. The lower layer portion of the polysilicon region is defined as a channel region.

REFERENCES:
patent: 5376559 (1994-12-01), Mukai et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-859693