Method of spacer formation and source protection after self-alig

Details Method of spacer formation and source protection after self-alig Method of spacer formation and source protection after self-alig

1997-03-07

1999-08-03

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, H01L 218247

Patent

active

059337303

ABSTRACT:
The present invention provides a semiconductor device and a method for providing such a semiconductor device which allows a field oxide etch while minimizing the damage to the silicon. This method is particularly useful for smaller semiconductor devices, for example, such as a semiconductor device utilizing core source spacing less than 0.4 microns. A method according to the present invention for providing a semiconductor device comprises the steps of depositing a first spacer oxide layer over a core area and a peripheral area of a semiconductor device; etching the first spacer oxide layer at the source side of core cell area; depositing a second spacer oxide layer over the core area and the peripheral area, and etching the first and second spacer oxide layers over the peripheral area only.

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