Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-17
1999-09-21
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
361320, 361321, 361322, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059557540
ABSTRACT:
Metal alkoxycarboxylate-based liquid precursor solutions are used form electronic devices (100) that include mixed layered superlattice materials (112) of a type having discrete oxygen octahedral layers (124) and (128) collated with a superlattice-generator layer (116). The precursor solutions include a plurality of metal moieties in effective amounts for yielding the layered superlattice materials. These metal moieties are mixed to include an A/B portion capable of forming an A/B layer (124), a perovskite-like AB layer portion capable of forming a perovskite-like AB octahedral layer (128), and a superlattice-generator portion capable of forming the superlattice-generator layer (116). The precursors are deposited in liquid form upon a substrate and annealed to provide the layered superlattice materials.
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Azuma Masamichi
McMillan Larry D.
Paz De Araujo Carlos A.
Matsushita Electronics Corporation
Meier Stephen D.
Symetrix Corporation
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