Thin film transistor

Details Thin film transistor Thin film transistor

1998-03-03

1999-12-07

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257412, 257638, H01L 2701, H01L 2712, H01L 310392

Patent

active

05998838&

ABSTRACT:
In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second insulating film. This reduces occurrence of gate leak considerably. Since the peripheral region of the stepped island is smaller in thickness than the central region above the channel, it is possible to minimize occurrence of gate electrode breakage. The silicon layer contains two or more inert gas atoms, and the atoms smaller in mass number (e.g., He) are contained in and near an interface with a silicon active layer while the atoms larger in mass number (e.g., Ar) than those smaller in mass number are contained in and near a second interface with a gate electrode.

REFERENCES:
patent: 5292675 (1994-03-01), Codama
patent: 5698882 (1997-12-01), Park
patent: 5767531 (1998-06-01), Yoshinouchi et al.
Sekiya et al., High Performance Poly-Crystalline Silicon Thin Film Transistors Fabricated Using Remote Plasma IEEE Electron Device Letters, vol. 15, No.2, (1994) pp. 69-71.

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