Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-25
1999-12-07
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
059988223
ABSTRACT:
Dielectric isolation in the bit-line direction is performed by a first trench filled with an insulator, dielectric isolation in the word-line direction is performed by a second trench filled with a conductive film serving as a field-shield electrode interposing an insulating film, and capacitors are formed on side walls of the second trench by the conductive film and a semiconductor substrate with the insulating film interposed therebetween. A high-density, large-scale DRAM is realized by combining the technologies of field-shield element isolation, trench element isolation, and side-wall capacitors in a trench. In this DRAM, the conductive film in a trench-capacitor structure serves as a field-shield electrode in a field-shield structure for dielectric isolation between memory cells. Since the capacitor forms a capacitance inside the semiconductor substrate on one side wall of the trench, high-density integration is possible. This further increases the density and the scale of a semiconductor integrated circuit.
REFERENCES:
patent: 4896197 (1990-01-01), Mashiko
patent: 5357132 (1994-10-01), Turner
patent: 5387534 (1995-02-01), Prall
patent: 5508541 (1996-04-01), Hieda et al.
patent: 5684313 (1997-11-01), Kenney
patent: 5693971 (1997-12-01), Gonzalez
Nikkei Microdevices, Jun. 1992, pp. 84-88.
IEEE Transactions on Electron Devices, vol. 42, No. 2, Feb. 1995, pp. 295-300.
Meier Stephen D.
Nippon Steel Semiconductor Corp.
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