Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-06
1999-12-07
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438396, 438397, H01L 218242
Patent
active
059982608
ABSTRACT:
A method for forming a DRAM capacitor that uses a sacrificial layer to form a gear-teeth mold for producing a storage electrode having a highly increased surface area. The mold in a sacrificial layer is formed by first depositing alternating layers of two different insulating materials on a dielectric layer, and then patterning the sacrificial layer to form an opening using a conventional method. Next, a wet etching operation is performed using an etchant having a high etching selectivity between the two insulating layers. Hence, sunken slots are formed in the insulating layers that have a higher etching rate than its adjacent insulating layers, thus obtaining a gear teeth cross-sectional profile. Finally, the mold in the sacrificial layer is used for forming the storage electrode.
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Bowers Charles
Chen Jack
United Microelectronics Corp.
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