Method for etching titanium nitride local interconnects

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156646, 156656, 1566591, 156667, 20419235, 20419237, 427 38, C23F 102, B44C 122, C03C 1500, H01L 21306

Patent

active

048789941

ABSTRACT:
A process for the etching of titanium containing film which utilizes both in situ and remote plasmas, and a gas mixture for the plasmas which comprises a halogen gas at low pressure and moderate temperature to produce an etch which is both selective to selected materials, for example, titanium silicide etc., and anisotropic.

REFERENCES:
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4687544 (1987-08-01), Bersin

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