Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-12-21
1999-03-16
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438701, 438624, H01L 218242
Patent
active
058829687
ABSTRACT:
An improved semiconductor device fabrication method capable of improving the insulation characteristic between neighboring electrodes, which includes the steps of a first step which coats a conductive material on an active region of a semiconductor substrate having an active region and a non-active region divided by a field oxide film and forms a first conductive layer; a second step which deposits a first cap layer and a second cap layer in order so as to insulate between the first conductive layer and an upper layer and etches the same mask; a third step which provides ion on the semiconductor substrate with a mask of the thusly etched first conductive layer, a first cap layer, and a second cap layer and forms a source/drain region; a fourth step which forms a side wall spacer at the side surface of the first conductive layer, the first cap layer and the second cap layer and deposits in order a protection film and a contact oxide film at the front surface of the layer made thereby; a fifth step which forms a photo-etching mask on the contact oxide film, etches the protection film and contact oxide film so as to expose a lower source/drain region, so that a contact hole is formed; and a sixth step which coats a conductive material on the front surface of the layer made after forming the contact hole and forms a second conductive layer contacting with the source/drain region in cooperation with the contact hole.
REFERENCES:
patent: 5296400 (1994-03-01), Park et al.
patent: 5318925 (1994-06-01), Kim
patent: 5654223 (1997-08-01), Jun et al.
LG Semicon Co. Ltd.
Nguyen Tuan H.
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