Semiconductor memory device capable of setting the magnitude of

Details Semiconductor memory device capable of setting the magnitude of Semiconductor memory device capable of setting the magnitude of

1997-01-06

1997-12-02

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Precharge

36518911, 365226, 365227, G11C 700

Patent

active

056943652

ABSTRACT:
A DRAM includes a substrate voltage generation unit for generating a substrate voltage having a negative value to be applied to a first node. The substrate voltage generation unit includes a detecting circuit. The detecting circuit includes a first PMOS transistor provided in series between a second node with a ground potential and a third node and a second PMOS transistor, and further includes a third PMOS transistor provided in parallel to the first PMOS transistor. The first and second PMOS transistors have the gates connected to the third node, and the third PMOS transistor has a gate receiving a signal. The detecting circuit is provided between the second node with the ground voltage and the first node, and further includes an NMOS transistor having a gate connected to the third node. The third PMOS transistor receives the signal of the "L" level in the self refresh mode and the signal of the "H" level in the normal mode. As a result, the clamp level of the substrate voltage is greater in the self refresh mode than in the normal mode. More specially, the NMOS transistor is turned on with the greater substrate voltage in the self refresh mode than the normal mode, so that the substrate voltage is increased and the capability of pause refresh is improved. Consequently, the interval of internal /RAS can be increased and power consumption can be reduced in the self refresh mode.

REFERENCES:
patent: 4401897 (1983-08-01), Martino, Jr. et al.
patent: 4985869 (1991-01-01), Miyamoto
patent: 5329168 (1994-07-01), Sugibayashi et al.
patent: 5341340 (1994-08-01), Hagura
patent: 5376840 (1994-12-01), Nakayama

Affiliated with

Also associated with

Rating

Semiconductor memory device capable of setting the magnitude of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device capable of setting the magnitude of , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device capable of setting the magnitude of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-807177