Resist patterns and method of forming resist patterns

Details Resist patterns and method of forming resist patterns Resist patterns and method of forming resist patterns

1992-10-22

1994-07-05

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430323, 430325, 430156, 430270, 430311, 430396, 430494, G03C 500

Patent

active

053266722

ABSTRACT:
In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yielding of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.

REFERENCES:
patent: 4745042 (1988-05-01), Sasago et al.
Minamiya, Kumagae, Sato, Ito and Nakase, "KrF excimer laser process LASER: LAteral and Surface modification for Enhancing Resist contrast" Digest of Papers 1990 3rd Micro Process Conference: A-1-3: pp. 14-15.
Kawai and Nagata, "Adhesion Characteristics Between Photoresists and Inorganic Substrate" Digest and Papers 1989 2nd Micro Process Conference; A-4-4; pp. 56-57.
Kawai and Nagata, "Adhesion between photoresists and inorganic substrate" Digest of Papers 1990 3rd Micro Process Conference; A-6-3; pp. 68-69.
Miyoshi, Deguchi, Somemura, Ishii and Matsuda, "SR Patterning Characteristics of Chemically Amplified Negative Resist"; pp. 103-108; NTT LSI Laboratories.

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