Method of making a capacitor in a semiconductor device

Details Method of making a capacitor in a semiconductor device Method of making a capacitor in a semiconductor device

1995-10-27

1997-06-10

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

056375263

ABSTRACT:
First and second imaginary capacitors having top and bottom plates are provided on a substrate. The top plate of the first imaginary capacitor and the bottom plate of the second imaginary capacitor are connected by metal wires, thereby forming a first plate of a real capacitor. The bottom plate of the first imaginary capacitor and the top plate of the second imaginary capacitor are connected by metal wires, thereby forming a second plate of the real capacitor. The real capacitor of the present invention is produced with a dielectric film formed between the first plate and the second plate of the real capacitor. The area of the first plate of the real capacitor is identical that of the second plate of the real capacitor.

REFERENCES:
patent: 4997794 (1991-03-01), Josquin et al.
patent: 5397729 (1995-03-01), Kayanuma et al.
patent: 5470775 (1995-11-01), Nariani
patent: 5500387 (1996-03-01), Tung et al.

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