Method of manufacturing a semiconductor device containing shallo

Details Method of manufacturing a semiconductor device containing shallo Method of manufacturing a semiconductor device containing shallo

1997-09-05

1999-10-26

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438976, H01L 21336

Patent

active

059727608

ABSTRACT:
Shallow LDD junctions are obtained by depositing a thin screening oxide layer prior to moderate or heavy ion implantations. The use of a thin deposited screening oxide, as by plasma enhanced chemical vapor deposition, instead of a thermally grown oxide, minimizes transient enhanced diffusion during annealing to activate the source/drain regions, thereby decreasing the junction depth.

REFERENCES:
patent: 5521106 (1996-05-01), Okabe
patent: 5712204 (1998-01-01), Horiuchi
Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era, vol. 1, Sunset Beach, California, pp. 161, 171, 1986.

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