Thin film transistor having a lightly doped drain and an offset

Details Thin film transistor having a lightly doped drain and an offset Thin film transistor having a lightly doped drain and an offset

1993-12-17

1995-07-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257410, 257900, H01L 2701, H01L 2713, H01L 2978

Patent

active

054303206

ABSTRACT:
A thin film transistor wherein generation of a leakage current is prevented to improve the operation stability thereof and a method for manufacturing the same. A polysilicon layer is formed on an insulating layer. A gate insulating layer is formed on the polysilicon layer. A gate electrode having a barrier layer formed thereon is formed on the gate insulating layer. The sidewall surface portion of the gate electrode is anodic oxidized to form a metal oxide layer on the sidewall of the gate electrode. A lightly doped drain region having a lower impurity concentration than that of source and drain regions of the thin film transistor or an offset region wherein no impurity is doped is formed in a portion of the polysilicon layer under the metal oxide layer. The thin film transistor may be manufactured by a low temperature process, and leakage current is suppressed when a reverse bias voltage is applied. Therefore, the operation stability of the thin film transistor is improved.

REFERENCES:
patent: 5091763 (1992-02-01), Sanchez
patent: 5183771 (1993-02-01), Mitsui et al.
patent: 5208472 (1993-05-01), Su et al.
patent: 5288666 (1994-02-01), Lee
patent: 5369303 (1994-11-01), Wei

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