Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-11-02
1995-07-04
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
427497, 427534, 427561, 427526, 2191216, 2504921, 216 66, 216 67, 216 79, C23C 1434, B05D 306, B44C 122
Patent
active
054297303
ABSTRACT:
According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
REFERENCES:
patent: 4851097 (1989-07-01), Hattori et al.
patent: 4868068 (1989-09-01), Yamaguchi et al.
patent: 4874460 (1989-10-01), Nadagawa et al.
patent: 4936968 (1990-06-01), Ohnishi et al.
patent: 4952421 (1990-08-01), Morimoto et al.
patent: 5104684 (1992-04-01), Tao et al.
Jpn. J. Appl. Phys., vol. 31, 1992, pp. 4468-4473, Part 1, No. 12B, Dec. 1992, Kunihiro Hosono, et al., "Novel Technique for Phase-Shifting-Mask Repair Using Focused-Ion-Beam Etch-Back Process".
K. Hosono, et al., Digest of the 5th International Micro Process Conference, Kawasaki, 1992, p. 198.
K. Hosono, et al., Extended Abstracts of the 53rd Autumn Meeting of the Japan Society of Applie 1992, 16p-L-14, Sep. 16, 1992.
Horioka Keiji
Inoue Soichi
Kariya Mitsuyo
Komano Haruki
Miyoshi Motosuke
Kabushiki Kaisha Toshiba
Nguyen Nam
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