Process for simultaneous removal of photoresist and polysilicon/

Details Process for simultaneous removal of photoresist and polysilicon/ Process for simultaneous removal of photoresist and polysilicon/

1993-10-29

1995-01-17

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156657, 156668, 134 1, 134 2, H01L 2100

Patent

active

053823168

ABSTRACT:
A plasma etch process is described for simultaneously removing photoresist and etch residues, such as silicon oxide residues, remaining on a substrate from a prior polysilicon and/or polycide etch. The process comprises: (a) generating radicals in a plasma generator upstream of an etch chamber, from an etch gas mixture comprising (i) oxygen, water vapor, or a mixture of same; and (ii) one or more fluorine-containing etchant gases; and (b) then contacting the substrate containing the photoresist and residues from the previous polysilicon/polycide etch with the generated radicals in the etch chamber to remove both the photoresist and the etch residues during the same etch step.

REFERENCES:
patent: 5030590 (1991-07-01), Amini et al.
patent: 5147499 (1992-09-01), Szwejkowski et al.
patent: 5174856 (1992-12-01), Hwang et al.
patent: 5200031 (1993-04-01), Latchford et al.
patent: 5221424 (1993-06-01), Rhoades
patent: 5228950 (1993-07-01), Webb et al.
patent: 5296093 (1994-03-01), Szwejkowski et al.

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