Semiconductor device having ferroelectrics layer

Details Semiconductor device having ferroelectrics layer Semiconductor device having ferroelectrics layer

1992-10-20

1995-07-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, H01L 2978

Patent

active

054364906

ABSTRACT:
A semiconductor device includes a semiconductor substrate, impurity diffusion layers formed in the surface portions of the semiconductor substrate with a desired gap therebetween, an insulator layer bridged between the impurity diffusion layers on the semiconductor substrate and an electrode stacked on the insulator layer. The insulator layer is formed of a ferroelectric of IV-VI compound.

REFERENCES:
patent: 2791760 (1957-05-01), Ross
patent: 2791761 (1957-05-01), Morton
patent: 4747671 (1988-05-01), Takahashi et al.
patent: 5119154 (1992-06-01), Gnadinger
patent: 5189594 (1993-02-01), Hoshiba
patent: 5191510 (1993-03-01), Huffman
patent: 5229309 (1993-07-01), Kato
Yamauchi, "A metal Insulator Semiconductor Device Using A Ferroelectric Polymer Thin Film in the Gate Insulator", Japanese Journal of Applied Physics, vol. 25, No. 4, Apr. 1986 pp. 590-594.
Sugibuchi, "Ferroelectric field effect memory device using Bi.sub.4 Ti.sub.3 12 film", Journal of Applied Physics, vol. 46, No. 7, Jul. 1975 pp. 2877-2882.

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