Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-08
2000-03-21
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, 257355, 257371, 257544, 327143, H01L 2972
Patent
active
060406100
ABSTRACT:
A semiconductor device comprises a chip including a MISFET having a source and a drain, in which one of the source and the drain is connected to a second current supply node, an impedance element having a first terminal connected to the other of the source and the drain and a second terminal connected to a first current supply node, and a switching element, in which a well or a body electrode of the MISFET has an active state and a standby state, and is connected to a bias voltage generator for generating different voltages through the switching element, the threshold voltage V.sub.ths during standby state of the MISFET is higher than the threshold voltage V.sub.tha during active state of the MISFET, a voltage applied to a gate of the MISFET being able to take two stationary values, and the following relationship is satisfied V.sub.DD (1-V.sub.ths /V.sub.DD)<V.sub.ths -V.sub.tha, where V.sub.DD represents the higher voltage among the two stationary values.
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S. Thompson et al., "Dual Threshold Voltages and Substrate Bias: Keys to High Performance, Low Power, 0.1 .mu.m Logic Designs," 1997 Symposium on VLSI Technology Digest of Technical Papers, pp. 69-70, Jan.
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Noguchi Mitsuhiro
Oowaki Yukihito
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
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