Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-06-06
2000-03-21
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438254, H01L 218242
Patent
active
060402156
ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor substrate, forming a contact hole in the first insulating film, burying a first conductive film into the contact hole, forming a second conductive film on the first insulating film to connect the second conductive film with the first conductive film, and forming a second insulating film on the second conductive film. The method further comprises the steps of selectively etching the second insulating film, the second conductive film, and a part of the first insulating film to produce a patterned second insulating film, a patterned conductive film, and a patterned first insulating film respectively, and forming sidewalls on sides of the patterned first and second insulating films and the patterned second conductive film to connect the sidewalls with the patterned second conductive film.
REFERENCES:
patent: 5102820 (1992-04-01), Chiba
patent: 5137842 (1992-08-01), Chan et al.
patent: 5443993 (1995-08-01), Park et al.
patent: 5578516 (1996-11-01), Chou
NEC Corporation
Tsai Jey
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