Semiconductors having defect denuded zones

Details Semiconductors having defect denuded zones Semiconductors having defect denuded zones

1998-06-09

2000-03-21

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438795, 438799, 438471, 438386, H01L 218234

Patent

active

060402113

ABSTRACT:
A method for processing a semiconductor substrate to form a denuded zone therein. The method includes providing a semiconductor substrate having an oxygen concentration in a region of the substrate adjacent to a surface of such substrate. A trench is formed in the surface of the substrate. Subsequent to the formation of the trench, reducing the oxygen concentration within the region.

REFERENCES:
patent: 5466628 (1995-11-01), Lee et al.
patent: 5466631 (1995-11-01), Ichikawa et al.
patent: 5573973 (1996-11-01), Sethi et al.
patent: 5757063 (1998-05-01), Tomita et al.
patent: 5786263 (1998-07-01), Perera
patent: 5844266 (1998-12-01), Stengl et al.
patent: 5893735 (1999-04-01), Stengl et al.
patent: 5939770 (1999-08-01), Kageyama

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