Semiconductor memory device and method of forming transistors in

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438382, H01L 218244

Patent

active

060402091

ABSTRACT:
A method of forming a transistor in a peripheral circuit of a random access memory device wherein a transistor gate, capacitor electrode or other component in the memory cell array is formed simultaneously with the formation of a transistor gate in the periphery.

REFERENCES:
patent: 4370798 (1983-02-01), Lien et al.
patent: 4408385 (1983-10-01), Mohan Rao
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4977099 (1990-12-01), Kotaki
patent: 5013678 (1991-05-01), Winnerl
patent: 5135881 (1992-08-01), Saeki
patent: 5293336 (1994-03-01), Ishii et al.
patent: 5356826 (1994-10-01), Natsume
patent: 5500387 (1996-03-01), Tung et al.

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