Metal wiring layer forming method for semiconductor device

Details Metal wiring layer forming method for semiconductor device Metal wiring layer forming method for semiconductor device

1996-03-04

1999-09-28

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438672, 438680, 438685, H01L 2144

Patent

active

059603208

ABSTRACT:
A silicon semiconductor device has at least one contact plug of chemical-vapor-deposited aluminum to a lower-level titanium contact provided with a titanium nitride layer that is a barrier both to the migration of aluminum and to the migration of silicon layer, but is treated so as to be smooth and titanium-rich on the surface thereof on which aluminum is chemical-vapor-deposited, so the chemical-vapor-deposited aluminum in the contact plug is homogeneously grown and free of voids therein. The silicon semiconductor device may additionally include trenches for buried aluminium wiring in the same insulating layer through which the contact hole for each contact plug extends. The preferred methods of manufacturing the device include electron-cyclotron-resonance etching, to smooth the surface of the side walls and bottoms of each contact hole and buried-aluminium-wiring trench, and to render the exposed surface titanium nitride layer titanium-rich.

REFERENCES:
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5591302 (1997-01-01), Shinohara et al.
patent: 5702982 (1997-12-01), Lee et al.
patent: 5705430 (1998-01-01), Avanzino et al.

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