Polishing methods for forming a contact plug

Details Polishing methods for forming a contact plug Polishing methods for forming a contact plug

1997-10-02

1999-09-28

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438629, 438631, 438633, 438637, H01L 214763

Patent

active

059603100

ABSTRACT:
A method for forming a contact plug for a microelectronic device includes the step of forming an insulating layer on a microelectronic substrate having a first conductive layer. A contact hole is formed in the insulating layer wherein the contact hole exposes a portion of the first conductive layer, and a second conductive layer is formed on the insulating layer opposite the microelectronic substrate and in the contact hole. The second conductive layer is polished thereby exposing a surface of the insulating layer, and the insulating layer is polished thereby planarizing a surface thereof.

REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 5073518 (1991-12-01), Doan et al.
patent: 5143820 (1992-09-01), Kotecha et al.
patent: 5358903 (1994-10-01), Kim
patent: 5726099 (1998-03-01), Jaso
patent: 5804503 (1998-09-01), Leidy et al.
patent: 5840625 (1998-11-01), Feldner
Wolf, Stanley, "Silicon Processing for the VLSI Era, vol. 1", Lattice Press, Sunset Beach, pp. 121-122 and 124, 1990.

Affiliated with

Also associated with

Rating

Polishing methods for forming a contact plug does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polishing methods for forming a contact plug, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing methods for forming a contact plug will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-715317