Method of manufacturing a semiconductor device including a bipol

Details Method of manufacturing a semiconductor device including a bipol Method of manufacturing a semiconductor device including a bipol

1998-07-29

1999-09-28

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438218, 438234, 438564, H01L 218238, H01L 218249, H01L 2122, H01L 2138

Patent

active

059602732

ABSTRACT:
An improved bipolar transistor of BiCMOS is provided to improve the breakdown voltage between a collector and a base. A low concentration diffusion layer is provided at a main surface of a semiconductor substrate at a boundary between an outer perimeter of an external base layer and an end portion of a field oxide film. The low concentration diffusion layer expands from the main surface of the semiconductor substrate toward the inside of the substrate and has a concentration lower than the impurity concentration of the external base layer.

REFERENCES:
patent: 4954455 (1990-09-01), Wanderman et al.
patent: 4994400 (1991-02-01), Yamaguchi et al.
patent: 5534723 (1996-07-01), Iwai et al.
patent: 5741083 (1998-04-01), Ikeda et al.

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