Method for forming metal layer of a semiconductor device

Details Method for forming metal layer of a semiconductor device Method for forming metal layer of a semiconductor device

1994-06-09

1997-09-09

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

2041921, 20419217, 20419222, 20419225, 2041923, 438643, 438661, C23C 1434, H01L 21324, H01L 2144

Patent

active

056656599

ABSTRACT:
A method for forming a metal layer including the steps of heat treating a semiconductor substrate for a predetermined time at an intermediate temperature between 200.degree. C. and 400.degree. C., then depositing the metal layer on the semiconductor substrate at a temperature below 200.degree. C., in a vacuum, then thermally treating the metal layer at a temperature between 0.6 Tm-1.0 Tm (where Tm is the melting point of the metal layer), without breaking the vacuum, thereby reflowing the grains of the metal layer, and then gradually cooling the metal layer. Alternatively, the intermediate heat-treatment step can be performed after the metal layer is thermally treated, in which case, the metal layer should thereafter be rapidly cooled.

REFERENCES:
patent: 4758533 (1988-07-01), Magee et al.
patent: 5171412 (1992-12-01), Talieh et al.
patent: 5175126 (1992-12-01), Ho et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5266521 (1993-11-01), Lee et al.

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