Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-03-15
1997-09-09
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438386, 438699, 438700, 438702, H01L 218242, H01L 213065
Patent
active
056656220
ABSTRACT:
Isotropic deposition of a selectively etchable material in an opening in a body of material followed by isotropic deposition of an etch resistant material forms a mask for anisotropic etching of the selectively etchable material at potentially sub-lithographic dimensions to form potentially sub-lithographic features within a trench. This process can be exploited to form a folded trench capacitor in which a trench is formed with one or more upstanding and possibly hollow features therein; effectively multiplying the surface area and or allowing reduced trench depth for a given charge storage capacity or a combination thereof. Further surface treatments such as deposition of hemispherical grain silicon can be used to further enhance the effective area of the trench. Isolation structures of sub-lithographic dimensions can also be formed by depositing appropriate materials within the trenches formed in accordance with the mask.
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Muller Karl Paul Ludwig
Natzle Wesley C.
Bowers Jr. Charles L.
International Business Machines - Corporation
Petraske Eric W.
Radomsky Leon
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