Method of fabricating semiconductor memory

Details Method of fabricating semiconductor memory Method of fabricating semiconductor memory

1997-03-05

1998-11-03

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, H01L 21336

Patent

active

058307940

ABSTRACT:
Methods of fabricating electrically alterable non-volatile semiconductor memory cells are provided. The methods include the steps of forming consecutively two paris of side walls defined at least partially by a floating gate, a control gate and dielectric layers to which dopant implantation into source region is self-aligned. Using such side walls provides accurate channel lengths of select gate transistors for uniform memory cell characteristics.

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