Forming a MOS transistor with a recessed channel

Details Forming a MOS transistor with a recessed channel Forming a MOS transistor with a recessed channel

1996-07-25

1998-09-29

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438298, 438301, H01L 21265

Patent

active

058145443

ABSTRACT:
A MOS transistor is fabricated by forming an inverse gate mask consisting of a lower silicon dioxide layer and an upper silicon nitride layer. The exposed channel region is thermally oxidized. The mask is removed to permit a source/drain implant. The oxide growth is removed so that the channel region is recessed. A differential oxide growth then serves to mask the source and the drain for channel threshold adjust and punch-through implants. A doped polysilicon gate is formed, with the thinner area of the differential oxide serving as the gate oxide. In the resulting structure, the punch-through dopant is spaced from the source and the drain, reducing parasitic capacitance and improving transistor switching speeds.

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