Method of manufacturing a semicondutor integrated circuit device

Details Method of manufacturing a semicondutor integrated circuit device Method of manufacturing a semicondutor integrated circuit device

1995-11-22

1998-09-29

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438265, 438592, H01L 218247

Patent

active

058145435

ABSTRACT:
A method for fabricating a semiconductor integrated circuit device comprising a nonvolatile memory cell, comprises the steps of forming a first gate material which comprises a silicon film containing no impurities, whose top surface is covered with an oxidation-resistant mask, and whose width in the gate-length direction is prescribed, on part of the surface of a first gate insulating film, forming a thermal-oxidation insulating film on the surface of an active region of a semiconductor substrate through thermal oxidation, removing an oxidation-resistant mask, forming a second gate material which comprises a silicon film into which impurities are introduced and whose width in the gate-length direction is prescribed, on each surface of the thermal-oxidation insulating film and the first gate material forming a second gate insulating film on the surface of the second gate material, and forming a third gate material on the surface of the second gate insulating film.

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