Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-04-18
1998-09-29
Fourson, George R.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438233, 438546, 438564, H01L 21225
Patent
active
058145419
ABSTRACT:
A method of manufacturing semiconductor devices yielding devices having impurity regions that are more shallow and exhibit less lateral diffusion than devices manufactured in accordance with prior art techniques. First, arsenic is introduced into a substrate. After the introduction of arsenic, phosphorus is introduced to the same portion of the substrate. The introductions of arsenic and phosphorus may be accomplished using diffusion or ion implantation techniques.
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Fourson George R.
Kabushiki Kaisha Toshiba
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