Stabilization of low-k carbon-based dielectrics

Details Stabilization of low-k carbon-based dielectrics Stabilization of low-k carbon-based dielectrics

1997-08-21

2000-02-29

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438623, 438624, 438778, 438780, H01L 21477

Patent

active

060309040

ABSTRACT:
A method for treating a film of carbon-based dielectric material such as diamond-like carbon to remove volatiles is described. The method incorporates the steps of providing a non-oxidizing ambient and heating the film above 350.degree. C. Heating may be by rapid thermal annealing. The dielectric constant of the material may be lowered. A stabilized carbon-based material is provided with less than 0.5% thickness or weight change/hour at a selected temperature at or below 400.degree. C. The invention overcomes the problem of dimensional instability during the incorporation of the material in integrated circuit chips as an intra and inter level dielectric.

REFERENCES:
patent: 4647494 (1987-03-01), Meyerson et al.
patent: 4965134 (1990-10-01), Ahne et al.
patent: 5059448 (1991-10-01), Chandra et al.
patent: 5320983 (1994-06-01), Ouellet
patent: 5376586 (1994-12-01), Beilin et al.
patent: 5462784 (1995-10-01), Grill et al.
patent: 5470661 (1995-11-01), Bailey et al.
patent: 5514885 (1996-05-01), Myrick
patent: 5559367 (1996-09-01), Cohen et al.
patent: 5789325 (1998-08-01), Chandra et al.
S.F. Carr et al. "High Temperature Diamond Thin Film For Capacitor", IEEE, pp. 271-275, 1995.
Matsubara et al. Low-K Fluorinated Amorphous Carbon Interlayer Technology for Quarter Micron Devices, IEEE, pp. 14.6.1--14.6.4, 1996.
Kopp et al. "simultaneous Formation of Emitter and Passivation Layer in a Single Rapid Thermal Cycle", IEEE, pp. 1527-1530, Dec. 1994.
Grill et al "Diamond-like carbon materials as low epsilon diectrics for multilevel interconnects in ULSI" Mat. Res. Soc. Symp. Proc. 443 443, 155 (1997).
A. Grill & B.S. Meyerson, "Development and Status of Diamond-like Carbon" Chapter 5 in Synthetic Diamond: Emerging CVD Science and Technology, editors K.E. Spear and J.P. Dismukes, John Wiley & Sons, New York (1994).
Saenger et al "Etch Stop and Electrical Properties of Si-Containing Diamond-like Carbon" Conf. Proc. ULSI XII (Materials Research Soc.) 499 (1997).
Grill et al Diamondlike Carbon Materials as Low-k Dielectrics Conference Proceedings ULSI (Materials Research Soc.) 417 (1997).

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