Method for making semiconductor device having nitrogen-rich acti

Details Method for making semiconductor device having nitrogen-rich acti Method for making semiconductor device having nitrogen-rich acti

1997-12-19

2000-02-29

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438232, 438516, 438525, 438528, H01L 21336

Patent

active

060308753

ABSTRACT:
A semiconductor device having a nitrogen-rich active region-channel interface and process for fabrication thereof is provided. The nitrogen-rich interface can, for example, can reduce the electric field potential in this region and reduce hot carrier injection effects. Consistent with one embodiment of the invention, a semiconductor device is provided having a substrate, at least one gate electrode disposed over the substrate and an active region disposed adjacent to gate electrode. The semiconductor device further includes a channel region extending from the active region beneath the gate electrode and a nitrogen-rich region disposed at an interface between the channel region and the active region. The nitrogen-rich region may, for example, be disposed at least in part in the channel region. The nitrogen-rich region may, for example, also be disposed at least part of the active region. Further, the active region may be disposed, for example, within the nitrogen-rich region.

REFERENCES:
patent: 4682407 (1987-07-01), Wilson et al.
patent: 4714519 (1987-12-01), Pfiester
patent: 4745079 (1988-05-01), Pfiester
patent: 5360751 (1994-11-01), Lee
patent: 5438007 (1995-08-01), Vinal et al.
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5516707 (1996-05-01), Loh et al.
patent: 5554781 (1996-09-01), Yamashita et al.
patent: 5750435 (1998-05-01), Pan
patent: 5804496 (1998-09-01), Duane
patent: 5837585 (1998-11-01), Wu et al.
U.S. application No. 08/780,615, filed Jan. 8, 1997.

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