Semiconductor device having fluorine-enhanced transistor with el

Details Semiconductor device having fluorine-enhanced transistor with el Semiconductor device having fluorine-enhanced transistor with el

1997-11-28

1999-04-27

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

257 43, 257 49, 438 3, 438300, 438533, H01L 2120, H01L 2136

Patent

active

058973583

ABSTRACT:
A semiconductor device having a fluorine-enhanced transistor with elevated active regions and process for fabricating such a device is provided. A semiconductor device, consistent with one embodiment of the invention, includes a substrate and at least one pair of elevated active regions disposed on the substrate. A fluorine-bearing barrier layer is disposed over the substrate between the elevated active regions. A high permittivity layer is disposed over the barrier layer and between the elevated active regions. Finally, a gate electrode is disposed over the high permittivity layer. In some embodiments, a thin insulating layer is disposed between the gate electrode and the high permittivity layer. The thin insulating layer and the fluorine-bearing barrier layer may, for example, both be formed of a topaz, while the high permittivity layer may, for example, be formed from a manganese oxide.

REFERENCES:
patent: 5352917 (1994-10-01), Ohmi
patent: 5693979 (1997-12-01), Sato
patent: 5726087 (1998-03-01), Tseng et al.
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5780343 (1998-07-01), Bashir
Jost, H., M. Braun and Ch. Carius, "The Role of Reactivity in Synthesis and the Properties of Magnesium Oxide" Solid State Ionics, 221-228, 1997.
Shannon, V.L. and M.Z. Karim, "Study of the Material Properties and Suitability of Plasma-Deposited Fluorine-Doped Silicon Dioxides for Low Dielectric Constant Interlevel Dielectrics", Thin Solid Films, 498-502, 1995.
Zhang Yu, and Xixin QU, "Thermal Oxidation of Thin Mangagese Films", Sensing Technology Department, Beijing Information Tech. Institute, Beijing China and Dept. of Microelectronis Tech. and Electronic Materials, Chegdu Institute of Radio Engin., Sichuan C, 1988.

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