Method of manufacturing insulated gate semiconductor device to i

Details Method of manufacturing insulated gate semiconductor device to i Method of manufacturing insulated gate semiconductor device to i

1997-10-16

1999-04-27

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438545, 438965, H01L 21336

Patent

active

058973559

ABSTRACT:
An insulated gate field effect transistor is manufactured according to a process in which an insulated gate structure is formed along a semiconductor chip. Dopant is introduced into the chip to form a body region, semiconductor material outside the body region forming a drain region. Dopant is introduced into the chip at the location of part of the body region to form a source region spaced apart from the drain region by a channel region. Dopant of the same conductivity type as the body-region dopant is introduced through a dopant-introducing section of the chip's upper surface and into the chip at the location of part of the body region to form a sub-surface peaked portion of the body region, the dopant-introducing section being spaced laterally apart from the channel and source regions. The sub-surface peaked portion reaches a peak net dopant concentration below the chip's upper surface so as to improve the transistor's ruggedness under drain avalanche conditions.

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