Semiconductor, semiconductor device, and method for fabricating

Details Semiconductor, semiconductor device, and method for fabricating Semiconductor, semiconductor device, and method for fabricating

1996-09-24

1999-04-27

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438477, H01L 2100, H01L 21322

Patent

active

058973478

ABSTRACT:
Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

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