Full face mask for capacitance-voltage measurements

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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118505, 118721, C23C 1434, C23C 1600

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active

060305134

ABSTRACT:
A mask for covering a substrate for performing capacitance-voltage measurements on the substrate is a full-faced mask covering substantially all of the substrate. The mask may include a ring with one or more strips across the ring with holes in the strips for target material deposition. In an alternative embodiment, the mask may be a disk with holes at various locations across the disk. In either embodiment, the mask generally conforms to the shape of the substrate, so that the clamp ring of the PVD chamber seats on the mask or on the substrate, so little or none of the plasma or sputtered material can escape between the substrate and clamp ring. Various embodiments of the mask provide different ways to hold the mask on the substrate, such as clamping with clips, gluing with an adhesive, folding extensions of the mask over the edge of the substrate, and holding by surface tension.

REFERENCES:
patent: 4391034 (1983-07-01), Stuby
patent: 4599970 (1986-07-01), Peterson
patent: 4704306 (1987-11-01), Nakamura
patent: 4830723 (1989-05-01), Galvagni et al.
patent: 4988424 (1991-01-01), Woodward et al.
patent: 5154797 (1992-10-01), Blomquist et al.
patent: 5223108 (1993-06-01), Hurwitt
patent: 5338424 (1994-08-01), Drimer et al.
patent: 5393398 (1995-02-01), Sugano
patent: 5415753 (1995-05-01), Hurwitt et al.
patent: 5505833 (1996-04-01), Werner et al.
patent: 5863396 (1999-01-01), Flanigan
PCT Notification of Transmittal of the International Search Report or the Declaration (International Search Report), PCT/US98/25376.
Abstract of Japan 63-107121 (Published May 12, 1988).

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