Method for removing undesirable second oxide while minimally aff

Details Method for removing undesirable second oxide while minimally aff Method for removing undesirable second oxide while minimally aff

1997-08-21

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438425, 438225, 438297, H01L 2131, H01L 2176

Patent

active

060966602

ABSTRACT:
The present invention relates generally to removing an undesirable second oxide, while minimally affecting a desirable first oxide, on an integrated circuit. The integrated circuit may be part of a larger system.
The second oxide is first converted to another material, such as oxynitride. The other material has differing characteristics, such as etching properties, so that it can then be removed, without substantially diminishing the first oxide.
The conversion may be accomplished by heating. Heating may be accomplished by rapid thermal or furnace processing. Subsequently, the other material is removed from the integrated circuit, for example by hot phosphoric etching, so that the desirable first oxide is not substantially affected.

REFERENCES:
patent: 5177028 (1993-01-01), Manning
patent: 5236856 (1993-08-01), Chan et al.
patent: 5273924 (1993-12-01), Chan et al.
patent: 5313087 (1994-05-01), Chan et al.
patent: 5384289 (1995-01-01), Westmoreland
patent: 5466639 (1995-11-01), Ireland
patent: 5573974 (1996-11-01), Hwang
patent: 5741396 (1998-04-01), Loenstein
patent: 5821153 (1996-10-01), Tsai et al.
Stanley Wolf Silicon Processing for the VSLI ERA vol. 3 Lattice Press pp. 345,648,650, 1995.

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