Self-aligned contacts to source/drain silicon electrodes utilizi

Details Self-aligned contacts to source/drain silicon electrodes utilizi Self-aligned contacts to source/drain silicon electrodes utilizi

1998-09-08

2000-08-01

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438578, 438597, 438663, 438672, 438675, 438680, H01L 2144

Patent

active

060966440

ABSTRACT:
Self-aligned contacts to the source and drain regions of a MOS device are formed by selectively removing portions of sidewall spacers from polysilicon source and drain electrodes. Metal silicide layers are then formed in contact with the exposed polysilicon portions and extending over and in contact with respective source and drain regions formed in a semiconductor substrate surface.

REFERENCES:
patent: 4335502 (1982-06-01), Richman
patent: 4814294 (1989-03-01), West et al.
patent: 4988632 (1991-01-01), Pfiester
patent: 5013676 (1991-05-01), Horigome
patent: 5130172 (1992-07-01), Hicks et al.

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