Method to fabricate dual threshold CMOS circuits

Details Method to fabricate dual threshold CMOS circuits Method to fabricate dual threshold CMOS circuits

1998-03-13

2000-08-01

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438527, H01L 21265

Patent

active

060966114

ABSTRACT:
The method for forming dual threshold circuits on a semiconductor substrate is provided. The semiconductor substrate has a first region, a second region, and a third region. The first region, the second region, and the third region are doped with first type dopants. Then the first region and the second region are doped with second type dopants. The second type dopants are opposite type dopants of the first type dopants. The semiconductor substrate can be performed with more steps to form transistors in the first region, the second region, and the third region.

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