Method for manufacturing silicon carbide semiconductor device

Details Method for manufacturing silicon carbide semiconductor device Method for manufacturing silicon carbide semiconductor device

1998-08-17

2000-08-01

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438433, 438522, 438542, H01L 21336, H01L 2176

Patent

active

060966076

ABSTRACT:
A method for manufacturing a silicon carbide semiconductor device having pn junctions is provided wherein a recessed portion is formed in a certain pattern in a surface of a substrate formed of a silicon carbide crystal, and an epitaxial layer having a conductivity type opposite to that of the substrate is grown on the substrate, and the surface of the surface is flattened so that the pn junctions appear on the surface of the substrate.

REFERENCES:
patent: 5654208 (1997-08-01), Harris et al.
patent: 5753938 (1998-05-01), Tahpar et al.
patent: 5804482 (1998-09-01), Konstantinov et al.
patent: 5977564 (1999-11-01), Kobayashi et al.
J.N. Shenoy et al., "High-Voltage Double-Implanted Power MOSFET's in 6SH-SiC", Mar. 1997, pp. 93-95, IEEE Electron Device Letters, vol. 18 No.3.
C.E. Weitzel et al., "Silicon Carbide High-Power Devices", Oct. 1996, pp. 1732-1741, IEEE Transactions on Electron Devices, vol. 43, No. 10.

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