Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-10-20
2000-08-01
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438639, H01L 218242
Patent
active
060966017
ABSTRACT:
A semiconductor device employable as a capacitor has a conductive pillar arranged in an opening produced in an insulator layer produced on a semiconductor substrate, the conductive pillar being connected with a conductive region of the semiconductor substrate and being surrounded by a dielectric cylinder which is further surrounded by a conductive cylinder which extends onto the surface of the semiconductor substrate, whereby allowing a large amount of capacity, regardless of the horizontal area of the semiconductor device. A semiconductor memory cell of the one transistor and one capacitor structure has a capacitor which has a conductive pillar arranged in an opening produced in an insulator layer produced on a semiconductor substrate, the conductive pillar being connected with a conductive region of the semiconductor substrate and being surrounded by a dielectric cylinder which is further surrounded by a conductive cylinder which extends onto the surface of the semiconductor substrate, whereby a large magnitude of integration is readily realized.
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Chaudhari Chandra
OKI Electric Industry Co., Ltd.
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